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== MOS == === N-MOS === GS 为正向电压是导通 [[文件:N-MOS-SI2302.jpg]] DS 不可为负值 (0 或 正值) 电源开关应用中,常将 S 接 GND,D 接 VCC,栅极 (G) 高电平导通 SI2302 实际测试: * D ---> 3.3V * G ---> MCU_PIN * S ---> Vsup 导通时,Vsup = 2.9V 左右,关闭时 Vsup = 0.7V 左右 <br> === P-MOS === GS 为负电压时导通 [[文件:P-MOS-SI2301.jpg ]] DS 不为正值 (0 或 负值) 开关类实际应用中,常将 S 接 VCC,D 接 GND,栅极 (G) 低电平导通 <br> == Logical Unit == === NOT === [[文件:CMOS Inverter.png]] 上为 PMOS,下为 NMOS。 * 高电平,NMOS 导通,输出低电平 * 低电平,PMOS 导通,输出高电平 <br><br> === NOT AND === [[文件:CMOS NAND.png]] <br><br> == 简单加法器 == <br> == SRAM == Static RAM. The Cache of CPU is SRAM. [[文件:SRAM Cell 6 CMOS.png]] A typical SRAM cell is made up of six MOSFETs. Each bit in an SRAM is stored on four transistors (M1, M2, M3, M4) that form two cross-coupled inverters. This storage cell has two stable states which are used to denote 0 and 1. Two additional access transistors serve to control the access to a storage cell during read and write operations. In addition to such six-transistor (6T) SRAM, other kinds of SRAM chips use 4, 8, 10 (4T, 8T, 10T SRAM), or more transistors per bit. Four-transistor SRAM is quite common in stand-alone SRAM devices (as opposed to SRAM used for CPU caches), implemented in special processes with an extra layer of polysilicon, allowing for very high-resistance pull-up resistors.[10] The principal drawback of using 4T SRAM is increased static power due to the constant current flow through one of the pull-down transistors. This is sometimes used to implement more than one (read and/or write) port, which may be useful in certain types of video memory and register files implemented with multi-ported SRAM circuitry. Generally, the fewer transistors needed per cell, the smaller each cell can be. Since the cost of processing a silicon wafer is relatively fixed, using smaller cells and so packing more bits on one wafer reduces the cost per bit of memory. Memory cells that use fewer than four transistors are possible – but, such 3T or 1T cells are DRAM, not SRAM (even the so-called 1T-SRAM). Access to the cell is enabled by the word line (WL in figure) which controls the two access transistors M5 and M6 which, in turn, control whether the cell should be connected to the bit lines: BL and BL. They are used to transfer data for both read and write operations. Although it is not strictly necessary to have two bit lines, both the signal and its inverse are typically provided in order to improve noise margins. During read accesses, the bit lines are actively driven high and low by the inverters in the SRAM cell. This improves SRAM bandwidth compared to DRAMs – in a DRAM, the bit line is connected to storage capacitors and charge sharing causes the bitline to swing upwards or downwards. The symmetric structure of SRAMs also allows for differential signaling, which makes small voltage swings more easily detectable. Another difference with DRAM that contributes to making SRAM faster is that commercial chips accept all address bits at a time. By comparison, commodity DRAMs have the address multiplexed in two halves, i.e. higher bits followed by lower bits, over the same package pins in order to keep their size and cost down. <br> == Reference == * https://3.14.by/en/read/homemade-cpus * https://en.wikipedia.org/wiki/Static_random-access_memory * https://en.wikipedia.org/wiki/MOSFET * https://en.wikipedia.org/wiki/CMOS <br><br><br>
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