CPU

来自Jack's Lab
2022年7月28日 (四) 14:19Comcat (讨论 | 贡献)的版本

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目录

1 MOS

DS(漏源极)间的导通电压条件:

  • N-MOS DS 为正电压
  • P-MOS DS 间为负电压

便于记忆:看 N、P 的符号,稳压二极管不流电流只有电压是为其有效导通电压条件


1.1 N-MOS

GS 为正向电压是导通

N-MOS-SI2302.jpg

  • 1: G (左上)
  • 2: S (左下)
  • 3: D(右边)

DS 不可为负值 (0 或 正值)

电源开关应用中,常将 S 接 GND,D 接 VCC,栅极 (G) 高电平导通


  • AO3400: Vds = 30V, Vgs = +-12V, Id = 5.8A
  • YJL3400: Vds = 30V, Vgs = +-12V, Id = 5.6A
  • SI2302CDS: Vds = 20V, Vgs = +-8V, Id = 2.6A
  • SI2302DDS: Vds = 20V, Vgs = +-8V, Id = 2.9A


SI2302 作为电源开关实际测试:

  • D ---> 3.3V
  • G ---> MCU_PIN
  • S ---> Vsup 为传感器供电

导通时,空载 Vsup = 2.9V 左右,关闭时 Vsup = 0.5V 左右。带载时(MCP3421),Vsup = 2.3V 左右 假 SI2302,貌似是晶体管打磨,和三极管表现同

导通时,空载 Vsup = 2.9V 左右,关闭时 Vsup = 0.5V 左右。带载时(MCP3421),Vsup = 2.69V,带压力传感器,Vsup = 2.3V


1.2 P-MOS

GS 为负电压时导通

P-MOS-SI2301.jpg

  • 1: G (左上)
  • 2: S (左下)
  • 3: D(右边)

DS 不为正值 (0 或 负值)

开关类实际应用中,常将 S 接 VCC,D 接 GND,栅极 (G) 低电平导通


  • AO3415: Vds = -20V, Vgs = +-8V, Id = -4.8A
  • SI2301A: Vds = -20V, Vgs =+-12V, Id = -2.8A
  • SI2301B: Vds = -20V, Vgs =+-8V, Id = -2.5A


SI2301: S 接 VCC = 3.287V,D 给传感器供电,

  • G 为高电平时,D 端电压为 0.8V
  • G 为低电平,小电流负载 MCP342x,D 端电压 3.287V 几乎无压降;
  • G 为低电平,负载压力传感器,,D 端电压 3.287V 也几乎无压降;


mos管做开关的一些实际经验

mos 作开关压降问题


2 Logical Unit

2.1 NOT

CMOS Inverter.png

上为 PMOS,下为 NMOS。

  • 高电平,NMOS 导通,输出低电平
  • 低电平,PMOS 导通,输出高电平



2.2 NOT AND

CMOS NAND.png



3 简单加法器


4 SRAM

Static RAM. The Cache of CPU is SRAM.

SRAM Cell 6 CMOS.png


A typical SRAM cell is made up of six MOSFETs. Each bit in an SRAM is stored on four transistors (M1, M2, M3, M4) that form two cross-coupled inverters. This storage cell has two stable states which are used to denote 0 and 1. Two additional access transistors serve to control the access to a storage cell during read and write operations. In addition to such six-transistor (6T) SRAM, other kinds of SRAM chips use 4, 8, 10 (4T, 8T, 10T SRAM), or more transistors per bit. Four-transistor SRAM is quite common in stand-alone SRAM devices (as opposed to SRAM used for CPU caches), implemented in special processes with an extra layer of polysilicon, allowing for very high-resistance pull-up resistors.[10] The principal drawback of using 4T SRAM is increased static power due to the constant current flow through one of the pull-down transistors.


This is sometimes used to implement more than one (read and/or write) port, which may be useful in certain types of video memory and register files implemented with multi-ported SRAM circuitry.


Generally, the fewer transistors needed per cell, the smaller each cell can be. Since the cost of processing a silicon wafer is relatively fixed, using smaller cells and so packing more bits on one wafer reduces the cost per bit of memory.


Memory cells that use fewer than four transistors are possible – but, such 3T or 1T cells are DRAM, not SRAM (even the so-called 1T-SRAM).


Access to the cell is enabled by the word line (WL in figure) which controls the two access transistors M5 and M6 which, in turn, control whether the cell should be connected to the bit lines: BL and BL. They are used to transfer data for both read and write operations. Although it is not strictly necessary to have two bit lines, both the signal and its inverse are typically provided in order to improve noise margins.


During read accesses, the bit lines are actively driven high and low by the inverters in the SRAM cell. This improves SRAM bandwidth compared to DRAMs – in a DRAM, the bit line is connected to storage capacitors and charge sharing causes the bitline to swing upwards or downwards. The symmetric structure of SRAMs also allows for differential signaling, which makes small voltage swings more easily detectable. Another difference with DRAM that contributes to making SRAM faster is that commercial chips accept all address bits at a time. By comparison, commodity DRAMs have the address multiplexed in two halves, i.e. higher bits followed by lower bits, over the same package pins in order to keep their size and cost down.


5 Reference




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